idh05sg60c 3 rd generation thinq! tm sic schottky diode features ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery / no forward recovery ? temperature independent switching behavior ? high surge current capability ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target applications thinq! 3g diode designed for fast switching applications like: maximum ratings parameter symbol conditions unit continuous forward current i f t c <130?c 5 a i f,sm t c =25?c, t p =10?ms 26 t c =150 c, t p =10?ms 18 non-repetitive peak forward current i f,max t c =25?c, t p =10?s 150 i 2 d t t c =25?c, t p =10?ms 3.2 a 2 s t c =150 c, t p =10?ms 2 repetitive peak reverse voltage v rrm t j =25?c 600 v diode dv/dt ruggedness d v/ d t v r = 0.480 v 50 v/ns power dissipation p tot t c =25?c 56 w operating and storage temperature t j , t stg -55 ... 175 c soldering temperature, wavesoldering only allowed at leads t sold 1.6mm (0.063 in.) from case for 10s 260 mounting torque m3 and m3.5 screws 60 ncm ? breakdown voltage tested at 20ma 2) ? optimized for high temperature operation ? lowest figure of merit q c /i f i 2 t value value surge non-repetitive forward current, sine halfwave ? smps e.g.; ccm pfc ? motor drives; solar applications; ups v dc 600 v q c 6 nc i f ; t c < 130 c 5 a product summary type package marking pin 1 pin 2 idh05sg60c pg - to220 - 2 d05g60c c a v dc 600 v q c 6 nc i f ; t c < 130 c 5 a product summary rev. 2.4 page 1 2012-12-12
idh05sg60c parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2.7 k/w r thja thermal resistance, junction- ambient, leaded - - 62 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics dc blocking voltage v dc i r =0.05 ma, t j =25 c 600 - - v diode forward voltage v f i f =5?a, t j =25?c - 2.1 2.3 i f =5?a, t j =150?c - 2.8 - reverse current i r v r =600?v, t j =25?c - 0.4 30 a v r =600?v, t j =150?c - 1.5 350 ac characteristics total capacitive charge q c - 6 - nc switching time 3) t c - - <10 ns total capacitance c v r =1?v, f =1?mhz - 110 - pf v r =300?v, f =1?mhz - 15 - v r =600?v, f =1?mhz - 15 - 1) j-std20 and jesd22 values v r =400?v, i f i f,max , d i f /d t =200?a/s, t j =150?c thermal resistance, junction - ambient 2) all devices tested under avalanche conditions, for a time periode of 10ms, at 20ma. 5) only capacitive charge occuring, guaranteed by design. 3) t c is the time constant for the capacitive displacement current waveform (independent from t j , i load and di/dt), different from t rr which is dependent on t j , i load and di/dt. no reverse recovery time constant t rr due to absence of minority carrier injection. 4) under worst case z th conditions. rev. 2.4 page 2 2012-12-12
idh05sg60c 1 power dissipation 2 diode forward current p tot =f( t c ); parameter: r thjc(max) i f =f( t c ) 4) ; t j 175 c; parameter: d = t p /t 3 typ. forward characteristic 4 typ. forward characteristic in surge current mode i f =f(v f ); t p =400 s; parameter: t j i f =f(v f ); t p =400 s; parameter: t j 0 10 20 30 40 50 60 25 50 75 100 125 150 175 p tot [w] t c [ c] 1 0.7 0.5 0.3 0.1 0 5 10 15 20 25 30 35 25 50 75 100 125 150 175 i f [a] t c [ c] - 55oc 25oc 100oc 150oc 175oc 0 1 2 3 4 5 6 7 8 0 1 2 3 4 i f [a] v f [v] i f - 55oc 25oc 100oc 150oc 175oc 0 10 20 30 0 2 4 6 8 10 i f [a] v f [v] i f rev. 2.4 page 3 2012-12-12
idh05sg60c 5 typ. capacitance charge vs. current slope 6 typ. reverse current vs. reverse voltage q c =f(d i f /d t ) 5) ; i f i f,max i r =f(v r ); parameter: t j 7 transient thermal impedance 8 typ. capacitance vs. reverse voltage z thjc =f( t p ); parameter: d = t p /t c =f( v r ); t c =25 c, f =1 mhz 0 1 2 3 4 5 6 7 100 400 700 1000 q c [nc] di f /d t [a/s] 25 c 100 c 150 c 175 c - 55 c 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 100 200 300 400 500 600 i r [a] v r [v] 10 - 1 10 0 10 1 10 2 10 3 0 25 50 75 100 125 150 c [pf] v r [v] 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 - 2 10 - 1 10 0 10 1 zthjc [k/w] tp [s] 0 0.01 0.02 0.05 0.1 0.2 0.5 rev. 2.4 page 4 2012-12-12
idh05sg60c 9 typ. c stored energy e c =f( v r ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 e c [j] v r [v] rev. 2.4 page 5 2012-12-12
idh05sg60c pg-to220-2: outline dimensions in mm/inches rev. 2.4 page 6 2012-12-12
idh05sg60c published by infineon technologies ag 81726 munich, germany ? 2012 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support , automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support systems are intended to be implanted in the human body and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.4 page 7 2012-12-12
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